Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 76: Graphene: Applications, Luminescence, and Spin Relaxation (jointly with HL, O)

TT 76.3: Vortrag

Mittwoch, 18. März 2015, 17:15–17:30, ER 270

Structural study of mono- and bilayer graphene nanoribbons directly grown on SiC(0001) — •Lauren A. Galves, Timo Schumann, João Marcelo J. Lopes, and Henning Riechert — Paul-Drude-Institut für Festkorperelektronik, 10117 Berlin, Germany

Graphene nanoribbons (GNR) are very promising for nanoelectronics, since they possess unique electronic properties which are dependent on their width, edges, as well as number of graphene layers [1-2]. Therefore, achieving the controlled and high-quality synthesis of GNRs is anticipated to be of great importance. One of the methods which show great potential is the growth of GNRs on surface facets of SiC(0001) by the graphitization method [3]. In this contribution we report on the controlled growth and characterization of epitaxial mono- and bilayer GNRs on SiC(0001) surfaces. They were synthesized by utilizing the surface graphitization method at high temperatures and a straightforward air annealing (for bilayer GNRs) [4]. The influence of the surface step heights (i.e. facet sizes) on the ribbon growth and properties was analyzed. A correlation between steps heights and ribbons width was established. The nanostructures were analyzed by AFM height and phase contrast images. This allowed the determination of the SiC surface morphology as well as ribbons width. Raman spectroscopy was employed to gain information about the thickness of the GNRs (i.e. mono- or bilayer graphene) and their preferential edge type.

[1] V. Barone et al., Nano Lett. 6, 2748 (2006); [2] T.S. Li et al., Eur. Phys. J. 64, 73 (2008); [3] M. Sprinkle et al. Nat. Nanotechnol. 5, 727 (2010); [4] M.H. Oliveira Jr. et al., Carbon 52, 83 (2013).