Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 8: Low-Dimensional Systems: Oxide Hetero-Interfaces

TT 8.2: Vortrag

Montag, 16. März 2015, 09:45–10:00, H 3010

An industry compatible low-damage nano-patterning process for LAO/STO heterostructures — •Mohsin Zamir Minhas¹, Hans-Helmuth Blaschek¹, Frank Heyroth², and Georg Schmidt^{1, 2} — ¹Institut für Physik, Martin-Luther-Universität Halle (Saale), Germany — ²Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle (Saale) , Germany

The discovery of an electron gas at the interface between the two band insulators LaAlO₃ (LAO) and SrTiO₃ (STO)[1] has initiated a huge effort to study this interface in detail. Later on other interesting properties such as induced ferromagnetism[2] and superconductivity[3] have been reported which make the LAO/STO interface a model system to study the fundamental physics of strongly correlated electronic system and also a candidate for future multifunctional oxide electronics. A reproducible nano-patterning technique is required to develop this unique interface into useful technologies. Here we present a reliable technique to physically pattern the quasi-two-dimensional electron gas (q2DEG) down to lateral dimensions as small as 100nm while maintaining its conducting properties. The fully industry compatible process uses electron beam lithography in combination with reactive ion etching. Temperature dependent transport properties of patterned Hall bars of various widths show a small size dependence of conductivity. The deviation can be explained by a narrow lateral depletion region.

[1] Ohtomo, A. et al. Nature 427 (2004) 423.

[2] Brinkman, A. et al. Nat. Mater. 6 (2007) 493.

[3] Reyren, N. et al. Science 317 (2007) 1196.