Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 8: Low-Dimensional Systems: Oxide Hetero-Interfaces

TT 8.7: Vortrag

Montag, 16. März 2015, 11:15–11:30, H 3010

Towards Mott design by δ-doping of strongly correlated titanates — •Frank Lechermann and Michael Obermeyer — I. Institut für Theoretische Physik, Universität Hamburg

Oxide heterostructures are promising systems for exploring novel composite materials beyond nature’s original conception. Already the doping of distorted-perovskite Mott-insulating titanates such as LaTiO₃ and GdTiO₃ with a single SrO layer gives rise to a rich correlated electronic structure [1]. A realistic superlattice study by means of the charge self-consistent combination of density functional theory (DFT) with dynamical mean-field theory (DMFT) reveals layer- and temperature-dependent multi-orbital metal-insulator transitions. Doped along the [001] direction, an orbital-selective metallic layer at the interface dissolves via an orbital-polarized doped-Mott state into an orbital-ordered insulating regime beyond the two conducting TiO₂ layers. Breaking the spin symmetry in δ-doped GdTiO₃ results in blocks of ferromagnetic itinerant and ferromagnetic Mott-insulating layers which are coupled antiferromagnetically.

[1] F. Lechermann and M. Obermeyer, arXiv:1411.1637 (2014)