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TT: Fachverband Tiefe Temperaturen

TT 93: Graphen (organized by DS)

TT 93.3: Vortrag

Donnerstag, 19. März 2015, 10:00–10:15, H 0111

Rotated domain network in graphene on cubic-SiC(001) — •Victor Aristov^1,2,3, Alexander Chaika^1,4, Olga Molodtsova², Alexei Zakharov⁵, Dmitry Marchenko⁶, Jaime Sánchez-Barriga⁶, Andrei Varykhalov⁶, Sergey Babenkov², Marc Portail⁷, Marcin Zielinski⁸, Barry Murphy⁴, Sergey Krasnikov⁴, Olaf Luebben⁴, and Igor Shvets⁴ — ¹ISSP RAS Chengolovka, Russia — ²DESY Hamburg, Germany — ³Uni Hamburg, Germany — ⁴Trinity College Dublin, Ireland — ⁵MAX-lab Lund, Sweden — ⁶BESSY Berlin, Germany — ⁷CNRS-CRHEA Valbonne, France — ⁸NOVASiC Le Bourget du Lac, France

The atomic structure of the cubic-SiC(001) surface during UHV graphene synthesis has been studied using PES, STM and LEED. The studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by *13.5o relative to the <110>-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2x2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2x2) surface and the graphene /SiC(001) rotated domain network and pave the way for optimizing large area graphene synthesis on low cost cubic SiC(001)/Si(001) wafers. Acknowledgments: This work was supported by the RAS, RFBR grants No 140200949 and 140201234, by the BMBF-Project No. 05K12GU2, PSP-Element No. U4606BMB1211, by a Marie Curie IIF grant No 12/IA/1264, by SPP 1459 of DFG.