Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 93: Graphen (organized by DS)

TT 93.7: Vortrag

Donnerstag, 19. März 2015, 11:00–11:15, H 0111

Doping of graphene on SiO₂ with N⁺ and B⁺ ions by low-energy ion irradiation. — •Steffen Weikert, Julian Alexander Amani, and Hans Christian Hofsäss — II. Physikalisches Institut, Georg-August-Universität Göttingen, Deutschland

Its unique electrical properties make graphene a promising candidate for future electronic devices. An important milestone, especially for the industrial production of those devices, is the realization of a method for large-scale doping of graphene. A potential method for controlled doping of graphene, while minimizing the damage inflicted upon the sample, is low-energy ion irradiation.^[1−3]

This work shows experiments on the irradiation of monolayer graphene on SiO₂ by N⁺ and B⁺ ions at 25 eV. For the experimental realization a mass-selected ion beam deposition system was used. ^[4] The irradiation was also simulated using the Monte Carlo program SDTrimSP. In addition to the irradiation of the graphene, I-V measurements were made before and after the irradiation.

[1] U. Bangert, W. Pierce, D. M. Kepaptsoglou, Q. Ramasse, R. Zan, M. H. Gass, J. A. Van den Berg, C. B. Boothroyd, J. Amani, and H. C. Hofsäss, Nano Lett. 2013, 13, 4902-4907.

[2] E. H. Åhlgren, J. Kotakoski, and A. V. Krasheninnikov, Phys. Rev. B (2011), 83, 115424.

[3] Y. Xu, K. Zhang, C. Brüsewitz, X. Wu, and H. C. Hofsäss, AIP Advances (2013), 3, 072120.

[4] H. Hofsäss, H. Binder, T. Klumpp and E. Recknagel, Diam. Relat. Mater. (1994), 3, 137.