Heidelberg 2015 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 3: Quantum Information: Concepts and Methods I
Q 3.2: Talk
Monday, March 23, 2015, 12:00–12:15, K/HS1
Focused ion beam implantation technology to selectively distribute Erbium ions in a dielectric solid-state matrix — •Nadezhda Kukharchyk1, Shovon Pal1, Arne Ludwig1, Pavel Bushev2, and Andreas D. Wieck1 — 1Ruhr-Univertsität Bochum, Bochum, Germany — 2University of Saarland, Saarbrücken, Germany
Rare-earth-doped dielectric crystals proved to be attractive in recent optical and microwave studies in perspective towards quantum computing applications. The dielectric crystal serves as a matrix in which the rare-earth ion's properties are positively enhanced, for example the luminescence quantum yield, the optical and the Zeeman state lifetimes. However, application of grown-doped crystals would imply difficulties in arranging arbitrarily distributed ensembles or single ion qubits on one crystal into a network. We perform focused ion beam implantation as a tool to selectively distribute spins or spin ensembles on a single crystal in a maskless ultra-high-vacuum process [1]. In this work, we present luminescence study of Erbium-implanted Yttrium Orthosilicate (Y2SiO5) crystals with varied process parameters: Implantation temperature, annealing time and annealing atmosphere. The goal of this study is to achieve the most effective implantation method with highest performance of the rare-earth optical and microwave properties. [1] Kukharchyk et al., Photoluminescence of focused ion beam implanted Er3+:Y2SiO5 crystals, Phys. Status Solidi RRL 8, 880 (2014)