Heidelberg 2015 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 31: Poster: Quantum Optics and Photonics II
Q 31.9: Poster
Tuesday, March 24, 2015, 17:00–19:00, C/Foyer
Scaling down cryogenic surface ion traps based on silicon — •Kirill Lakhmanskiy1, Michael Niedermayr1, Philip Holz1, Muir Kumph1, Alexander Erhard1, Stefan Partel2, Johannes Edlinger2, Yves Colombe1, Michael Brownnutt1, and Rainer Blatt1, 3 — 1Universität Innsbruck, Austria — 2FH Vorarlberg, Austria — 3IQOQI, Innsbruck, Austria
We report on our recent experimental results using surface ion traps based on intrinsic silicon in cryogenic environment. Silicon is a broadly used material in the semiconductor industry. Unfortunately, silicon has high RF losses, and cannot be used as-is to make RF ion traps. Until now, there have been two approaches around this issue. One consists in adding an electrode that shields the substrate from the RF; another one uses highly doped silicon as a conductive electrode material. Here we take another approach and use silicon as a substrate for the trap electrodes [1]: below T = 25 K, the charge carriers in intrinsic silicon freeze out, leaving the substrate as a good insulator with low RF losses. Our traps were fabricated using a deep reactive ion etching process followed by silicon oxidation and metal deposition. With such traps, we were able to show very low ion heating rates at a 230 um ion-electrode separation, with a good repeatability in a sample of 6 traps [1]. Our current goal is to scale down our traps while keeping the heating rate sufficiently low to perform high fidelity quantum manipulation.
[1] M. Niedermayr et al., New J. Phys. 16, 113068, 2014