Heidelberg 2015 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 8: Quantum Optics II
Q 8.3: Talk
Monday, March 23, 2015, 15:00–15:15, C/HSO
Temperature dependence of the diamond silicon vacancy zero phonon line and the resulting electron-phonon interaction model — •Jan M. Binder1, Kay D. Jahnke1, Alp Sipahigil2, Marcus W. Doherty3, Mathias Metsch1, Lachlan J. Rogers1, Neil B. Manson3, Mikhail D. Lukin2, and Fedor Jelezko1 — 1Institute for Quantum Optics and IQST, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany — 2Department of Physics, Harvard University, 17 Oxford Street, Cambridge, MA 02138, USA — 3Laser Physics Centre, Research School of Physics and Engineering, Australian National University, ACT 0200, Australia
We investigated the linewidth and position of the zero phonon line (ZPL) of the negatively charged silicon vacancy centre (SiV−) in diamond using photoluminescence excitation (PLE) spectroscopy. We also measured its flourescence lifetime using pulsed excitation measurements at temperatures ranging form 4 K to 350 K. The resulting linear linewidth dependency below 20K can be explained with a first-order model of electron-phonon interactions. Explaining the T3 dependency for linewidth and lineshift at higher temperatures requires second-order interactions to be included. This situation is similar to that found in the NV−, but the inversion symmetry of SiV− leads to T3 instead of T5. The radiative lifetime results can de described by a Mott-Seitz mechanism.
Further implications of this model will be discussed in the talk by Kay Jahnke, a preprint version of the associated paper is available as arXiv:1411.2871 [quant-ph].