Wuppertal 2015 – scientific programme
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T: Fachverband Teilchenphysik
T 11: Halbleiter: F&E 1
T 11.7: Talk
Monday, March 9, 2015, 15:30–15:45, I.12.02 (HS 31)
Characterization of Active CMOS Sensors for Capacitively Coupled Pixel Detectors — •Toko Hirono1, Laura Gonella1, Jens Janssen1, Tomasz Hemperek1, Fabian Hügging1, Hans Krüger1, Norbert Wermes1, and Ivan Peric2 — 1Institute of Physics, University of Bonn, Bonn, Germany — 2Institut für Prozessdatenverarbeitung und Elektronik, Karlsruher Institut für Technologie, Karlsruher, Germany
Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors.
The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors will be shown.