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T: Fachverband Teilchenphysik

T 34: Halbleiter: Test und Auslese 1

T 34.3: Vortrag

Montag, 9. März 2015, 17:15–17:30, K.12.18 (K3)

Long term charge collection measurements on silicon strip detectors: comparison between irradiated and as-grown samples — •Riccardo Mori¹, Christopher Betancourt¹, Susanne Kühn¹, Marc Manuel Hauser¹, Ines Messmer¹, Andreas Hasenfratz¹, Maira Thomas¹, Kristin Lohwasser², Ulrich Parzefall¹, and Karl Jakobs¹ — ¹Albert-Ludwigs Universität Freiburg — ²Deutsches Elektronen-Synchrotron

In the last years many groups observed a decrease of the performance quantified as charge collection efficiency of silicon strip detectors kept at high voltage and in front of the MIP-source providing minimum ionizing particles in long-term measurements. Several explanations of this effect have been proposed, either attributing it to a surface effect (the increase of the charge sharing due to the positive charge produced in the oxide layer by the source, or related to the environmental humidity) or a bulk effect (change of the deep defect charge distribution due to the high voltage).

The understanding of this phenomena can from one side shows new properties of silicon sensors, and from the other help in the development of sensors being radiation hard and having stable performance in time.

In this contribution we present and compare long term charge collection measurements performed on irradiated and non-irradiated sensors developed for the Upgrade of the ATLAS experiment, in order to discriminate between the possible explanations of this phenomena.