Wuppertal 2015 – scientific programme

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T: Fachverband Teilchenphysik

T 63: Halbleiter: Strahlenhärte

T 63.1: Talk

Wednesday, March 11, 2015, 16:45–17:00, G.10.05 (HS 7)

Towards a new radiation model for proton-induced defects in silicon — •Elena Donegani, Eckhart Fretwurst, Erika Garutti, Alexandra Junkes, and Joern Schwandt — University of Hamburg

Radiation damage to tracking layers of future generation HEP experiments will strongly affect the detectors’ performance and resolution, e.g. after fluences as high as 1.3-5·10¹⁶/cm² during 5-10 years operation of HL-LHC. It is known that radiation-induced defects in silicon (both point-like and cluster-like) are responsible for the increased leakage current, the decreased charge collection efficiency, and the modified electric field.

Being able to simulate and predict the effect of radiation damage as a function of particle fluence, type and energy is essential for the design optimization of future silicon detectors for the LHC upgrade. Currently few models exist, which attempt to describe bulk defects in silicon with effective parameters representing the concentration, energy and cross-section of donors and acceptors. It is the scope of the present work to link these effective parameters to precise microscopic measurements of defects, in the aim to extract a measurement driven-model for bulk damage.