Wuppertal 2015 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 63: Halbleiter: Strahlenhärte
T 63.7: Vortrag
Mittwoch, 11. März 2015, 18:15–18:30, G.10.05 (HS 7)
Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel 2 upgrade — •Matteo Centis Vignali1, Doris Eckstein2, Thomas Eichhorn2, Erika Garutti1, Alexandra Junkes1, and Georg Steinbrück1 — 1Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany — 2Deutsches Elektronen Synchrotron, DESY, Notkestraße 85, 22607 Hamburg, Germany
The high-luminosity upgrade of the Large Hadron Collider foreseen around 2023 resulted in the decision to replace the entire tracking system of the CMS experiment. The new pixel detector will be exposed to severe radiation corresponding to 1 MeV neutron equivalent fluence up to φeq ≈ 1016 cm−2 and ionizing dose of ≈ 5 MGy after 3000 fb−1. Thin planar silicon sensors are good candidates to build the pixel detector since the degradation of the signal is less severe than for thicker devices.
A study has been carried out in order to characterize highly irradiated planar epitaxial silicon sensors with an active thickness of 100 µm, in addition other silicon materials with a thickness of 200 µm have been studied. The investigation includes pad diodes and strip detectors irradiated up to a fluence of φeq = 1.3 × 1016 cm−2.
The diodes have been characterized using laboratory measurements, while measurements have been carried out at the DESY II test beam facility to characterize the charge collection of the strip detectors.
In this talk, the results obtained for p-bulk sensors are shown.