Hamburg 2016 – scientific programme

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T: Fachverband Teilchenphysik

T 30: Halbleiterdetektoren II (Pixel)

T 30.2: Talk

Monday, February 29, 2016, 17:00–17:15, VMP8 HS

TID-dependent current measurements of IBL readout chips — •Karola Dette for the ATLAS Pixel collaboration — TU Dortmund, Experimentelle Physik IV — CERN, Schweiz

The ATLAS detector consists of several subsystems with a hybrid pixel detector as the innermost component of the tracking system. The pixel detector has been composed of three layers of silicon sensor assemblies during the first data taking run of the LHC and has been upgraded with a new 4th layer, the so-called Insertable B-Layer (IBL), in summer 2014. Each silicon sensor of the IBL is connected to a Front End readout chip (FE-I4) via bump bonds. During the first year of data taking an increase of the LV current produced by the readout chips was observed. This increase could be traced back to radiation damage inside the silicon. The dependence of the current on the Total Ionizing Dose (TID) and temperature has been tested with X-ray irradiations and will be presented in this talk.