Hamburg 2016 –
wissenschaftliches Programm
T 53: Halbleiterdetektoren III (Strahlenhärte)
Dienstag, 1. März 2016, 16:45–19:00, VMP8 HS
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16:45 |
T 53.1 |
3-Dimensional Charge Collection Efficiency measurements using volumetric tomographic reconstruction — •Daniel Dobos
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17:00 |
T 53.2 |
Strahlenhärte von n-in-p Siliziumstreifensensoren für das CMS-Phase-II-Upgrade — Felix Bögelspacher, Alexander Dierlamm, •Marius Metzler, Thomas Müller, Martin Printz, Daniel Schell und Pia Steck
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17:15 |
T 53.3 |
Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade — •Matteo Centis Vignali, Doris Eckstein, Thomas Eichhorn, Erika Garutti, Alexandra Junkes, and Georg Steinbrück
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17:30 |
T 53.4 |
X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO2 interface of segmented silicon sensors — •Ioannis Kopsalis, Eckhart Fretwurst, Erika Garutti, Robert Klanner, and Joern Schwandt
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17:45 |
T 53.5 |
TSC measurements on proton-irradiated p-type Si-sensors — •Elena Donegani, Eckhart Fretwurst, Erika Garutti, and Alexandra Junkes
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18:00 |
T 53.6 |
Messungen des Leckstroms zur Bestimmung der effektiven Bandlücke und Schädigungskonstante stark bestrahlter Siliziumsensoren — •Moritz Wiehe, Tony Affolder, Gianluigi Casse, Paul Dervan, Susanne Kühn, Riccardo Mori, Ulrich Parzefall und Sven Wonsak
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18:15 |
T 53.7 |
An edge-TCT setup for the investigation of radiation damaged silicon sensors — •Finn Feindt, Christian Scharf, Erika Garutti, and Robert Klanner
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18:30 |
T 53.8 |
Module mit dünnen planaren Silizium-Sensoren für den ATLAS Pixel-Detektor am HL-LHC — •Natascha Savic, Anna Macchiolo, Richard Nisius und Stefano Terzo
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18:45 |
T 53.9 |
Absorption of light, drift velocity, and trapping times in highly irradiated silicon pad sensors — •Christian Scharf, Robert Klanner, and Erika Garutti
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