Hamburg 2016 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 53: Halbleiterdetektoren III (Strahlenhärte)

T 53.1: Vortrag

Dienstag, 1. März 2016, 16:45–17:00, VMP8 HS

3-Dimensional Charge Collection Efficiency measurements using volumetric tomographic reconstruction — •Daniel Dobos — CERN, Geneva, Switzerland

For a better understanding of the electrical field distribution of 3D semiconductor detectors and to allow efficiency based design improvements, a method to measure the 3D spatial charge collection efficiency of planar, 3D silicon and diamond sensors using 3D volumetric reconstruction techniques is possible. Simulation results and first measurements demonstrated the feasibility of this method and show that with soon available 10 times faster beam telescopes even small structures and efficiency differences will become measurable in few hours.