Hamburg 2016 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
T: Fachverband Teilchenphysik
T 53: Halbleiterdetektoren III (Strahlenhärte)
T 53.3: Talk
Tuesday, March 1, 2016, 17:15–17:30, VMP8 HS
Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade — •Matteo Centis Vignali1, Doris Eckstein2, Thomas Eichhorn2, Erika Garutti1, Alexandra Junkes1, and Georg Steinbrück1 — 1Institut für Experimentalphysik, Universität Hamburg — 2Deutsches Elektronen Synchrotron, DESY
The high-luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the tracker of the CMS experiment. The innermost layer of the new pixel detector will be exposed to severe radiation corresponding to a 1 MeV neutron equivalent fluence up to Φeq = 2 · 1016 cm−2 and an ionizing dose of ≈ 10 MGy after an integrated luminosity of 3000 fb−1. Silicon crystals grown with different methods and sensor designs are under investigation in order to optimize the sensors for such high fluences. Thin planar silicon sensors are good candidates to achieve this goal, since the degradation of the signal produced by traversing particles is less severe than for thicker devices.
Epitaxial pad diodes and strip sensors irradiated up to fluences of Φeq = 1.3 · 1016 cm−2 have been characterized in laboratory measurements and beam tests at the DESY II facility. The active thickness of the strip sensors and pad diodes is 100 µm. In addition, strip sensors produced using other growth techniques with a thickness of 200 µm have been studied.
In this talk, the results obtained for p-bulk sensors are shown.