T 53: Halbleiterdetektoren III (Strahlenhärte)
Tuesday, March 1, 2016, 16:45–19:00, VMP8 HS
 |
16:45 |
T 53.1 |
3-Dimensional Charge Collection Efficiency measurements using volumetric tomographic reconstruction — •Daniel Dobos
|
|
|
|
17:00 |
T 53.2 |
Strahlenhärte von n-in-p Siliziumstreifensensoren für das CMS-Phase-II-Upgrade — Felix Bögelspacher, Alexander Dierlamm, •Marius Metzler, Thomas Müller, Martin Printz, Daniel Schell und Pia Steck
|
|
|
|
17:15 |
T 53.3 |
Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade — •Matteo Centis Vignali, Doris Eckstein, Thomas Eichhorn, Erika Garutti, Alexandra Junkes, and Georg Steinbrück
|
|
|
|
17:30 |
T 53.4 |
X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO2 interface of segmented silicon sensors — •Ioannis Kopsalis, Eckhart Fretwurst, Erika Garutti, Robert Klanner, and Joern Schwandt
|
|
|
|
17:45 |
T 53.5 |
TSC measurements on proton-irradiated p-type Si-sensors — •Elena Donegani, Eckhart Fretwurst, Erika Garutti, and Alexandra Junkes
|
|
|
|
18:00 |
T 53.6 |
Messungen des Leckstroms zur Bestimmung der effektiven Bandlücke und Schädigungskonstante stark bestrahlter Siliziumsensoren — •Moritz Wiehe, Tony Affolder, Gianluigi Casse, Paul Dervan, Susanne Kühn, Riccardo Mori, Ulrich Parzefall und Sven Wonsak
|
|
|
|
18:15 |
T 53.7 |
An edge-TCT setup for the investigation of radiation damaged silicon sensors — •Finn Feindt, Christian Scharf, Erika Garutti, and Robert Klanner
|
|
|
|
18:30 |
T 53.8 |
Module mit dünnen planaren Silizium-Sensoren für den ATLAS Pixel-Detektor am HL-LHC — •Natascha Savic, Anna Macchiolo, Richard Nisius und Stefano Terzo
|
|
|
|
18:45 |
T 53.9 |
Absorption of light, drift velocity, and trapping times in highly irradiated silicon pad sensors — •Christian Scharf, Robert Klanner, and Erika Garutti
|
|
|
