Hamburg 2016 – scientific programme

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T: Fachverband Teilchenphysik

T 72: Halbleiterdetektoren IV (MAPS, CMOS)

T 72.5: Talk

Wednesday, March 2, 2016, 17:50–18:05, VMP8 HS

A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process — •Tomasz Hemperek, Tetsuichi Kishishita, Hans Krüger, and Norbert Wermes — Institute of Physics, University of Bonn, Bonn, Germany

An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-?lm High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. Standard FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to trapped charge in the buried oxide layer and charged interface states created at the silicon oxide boundaries (back gate effect). The X-FAB 180nm HV-SOI technology offers an additional isolation using a deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection. The design and measurement results from first prototypes are presented including radiation tolerance to total ionizing dose and charge collection properties of neutron irradiated samples.