Hamburg 2016 – scientific programme

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T: Fachverband Teilchenphysik

T 72: Halbleiterdetektoren IV (MAPS, CMOS)

T 72.6: Talk

Wednesday, March 2, 2016, 18:05–18:20, VMP8 HS

Characterization of Active CMOS Pixel Sensors on High Resistive Substrate — •Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Piotr Rymaszewski, and Norbert Wermes — Physikalisches Institut Universität Bonn, Bonn, Germany

Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance.

A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2k Ωcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors will be shown.