Hamburg 2016 – scientific programme

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T: Fachverband Teilchenphysik

T 75: Detektorsysteme III

T 75.2: Talk

Wednesday, March 2, 2016, 17:00–17:15, VMP8 SR 205

Investigation of the impact of mechanical stress on the properties of silicon sensor modules for the ATLAS Phase II Upgrade — •Martin Stegler, Luise Polay, Dennis Spehrlich, and Ingo Bloch — DESY, Zeuthen, Germany

The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. Such a module consists of silicon sensors, boards and readout chips. In a currently ongoing study new adhesives to connect the modular components thermally and mechanically are examined. It was shown that the silicon sensor is exposed to mechanical stress when part of a module. Mechanical stress can cause damage to a sensor and can change the tensors of electrical properties. The study of the effects of mechanical stress on characteristics of the silicon sensor modules are the focus in this presentation. The thermal induced tensile stress near to the surface of a silicon sensor build in a module was simulated. A four point bending setup was used to measure the maximum tensile stress of silicon and to verify the piezoresistive effect on ATLAS07 sensors. The results of the electrical measurements and simulations of stressed silicon sensor modules are shown in the presentation.