Hannover 2016 – scientific programme
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A: Fachverband Atomphysik
A 20: Atomic systems in external fields
A 20.2: Poster
Tuesday, March 1, 2016, 16:30–19:00, Empore Lichthof
Simulation of attosecond-streaking in dielectric nanospheres — •Lennart Seiffert1, Sergey Zherebtsov2, Philipp Rupp2, Philipp Henning1, Matthias Kling2, and Thomas Fennel1 — 1Universität Rostock — 2Ludwig-Maximilians-Universität München
Electron transport in dielectrics is of fundamental importance for electronic devices and plays a crucial role in photoelectron spectroscopy and microscopy. The effective escape depth of photoemission from dielectrics depends strongly on inelastic collisions that typically take place on attosecond timescales and may thus be accessible with attosecond metrology [1]. So far, attosecond-streaking has been applied to atomic systems to study ionization delays [2] and utilized to investigate electron transport in metals [3] and adlayer-covered metals [4]. A promising approach to establish attosecond-streaking in dielectrics relies on the utilization of isolated nanosolids to circumvent space charge problems. Here, we simulate attosecond-streaking at isolated SiO2 nanospheres and investigate the impact of electron transport on the streaking spectra. Our semi-classical Monte-Carlo trajectory simulations [5] support that attosecond-streaking can be used as a universal tool to directly clock the inelastic scattering time in dielectrics [6].
[1] R. Kienberger et al., Nature 427, 817-821 (2004)
[2] M. Schultze et al., Science 328, 1658-1662 (2010)
[3] A. L. Cavalieri et al., Nature 449, 1029-1032 (2007)
[4] S. Neppl et al., Nature 517, 342-346, (2015)
[5] F. Süßmann et al., Nat Commun. 6, 7944 (2015)
[6] F. Calegari et al., in preparation