Hannover 2016 – scientific programme
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P: Fachverband Plasmaphysik
P 18: Poster Session- Plasma Technology
P 18.3: Poster
Wednesday, March 2, 2016, 16:30–19:00, Empore Lichthof
Plasma etch requirements for technological preparation of photonic building blocks — •Harald Richter1, David Stolarek1, Mirko Fraschke1, Steffen Marschmeyer1, Christian Mai1, Stefan Lischke1, Lars Zimmermann1,2, Andreas Mai1, Stefan Meister2, Christoph Theiss2, and Hanjo Rhee2 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) — 2Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin
The combination of silicon photonic and electronic components on the same chip is a prospective approach for processing of optoelectronic integrated circuits. The idea of a compact integration of both components is based on the compatibility of silicon-on-insulator (SOI) photonics with highly integrated microelectronic technologies. The integration of photonic building blocks with a state-of-the-art BiCMOS process requests a combination of local SOI regions in a bulk silicon environment.
The present work is focused on the technological fabrication of integrated silicon photonic basic features. Here, plasma etching is a key technological process step for realization of suitable substrate with local SOI and bulk Si regions and the subsequent preparation of diverse silicon photonic components (waveguides, nanowires, coupling structures, photonic crystals). Different hard masks for the several plasma etch processes were tested and optimized. Experiments have shown the mask open step is significant for preparation of high-performance silicon photonic modules.