Hannover 2016 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 11: Poster: Quantum Optics and Photonics I
Q 11.25: Poster
Monday, February 29, 2016, 16:30–19:00, Empore Lichthof
A silicon vacancy-based quantum memory in diamond — •Johannes Görlitz1, Jonas Nils Becker1, Eilon Poem2, Joshua Nunn2, Ian Alexander Walmsley2, and Christoph Becher1 — 1Universität des Saarlandes, Saarbrücken, Germany — 2Clarendon Laboratory, University of Oxford, United Kingdom
Due to its favourable spectral properties, the silicon vacancy center (SiV) in diamond is already a promising candidate for the realization of a spin-photon interface for quantum communication applications. Because of its large ground state splitting of about 48 GHz, we propose that the SiV is also a potential candidate for broadband quantum memory applications. We present preliminary work demonstrating the feasibility of such a device based on a Raman-type memory scheme in a dense, homogenous SiV ensemble fabricated by homoepitaxial CVD growth on top of a low strain, high-pressure-high-temperature (HPHT) diamond substrate. The sample is investigated at 4 K in a flow cryostat setup with a transmission geometry specifically build to allow for efficient memory preparation and readout. The ensemble is pre-characterized using photoluminescence excitation (PLE) and coherent population trapping (CPT) experiments. The obtained experimental parameters are used in a theoretical model to calculate memory efficiences as well as optimized control pulse parameters that can be used in the near future to build a first experimental realization of the memory.