Hannover 2016 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 42: Poster: Quantum Optics and Photonics III
Q 42.54: Poster
Mittwoch, 2. März 2016, 16:30–19:00, Empore Lichthof
Spectral diffusion of Silicon-Vacancy centers in Nanodiamonds — •O. Wang1, L. Rogers1, A. Kurtz1, D. Rudnicki2, U. Jantzen1, V.A. Davydov3, V.N. Agafonov4, A. Kubanek1, and F. jelezko1 — 1Institute of Quantum Optics, Ulm, Germany — 2Institute of Physics, Jagiellonian University, Krakow, Poland — 3Institute for High Pressure Physics, Russian Academy of Science, Moscow, Russia — 4Greman, Universit F. Rabelais, Tours, France
With appealing properties, weak side band and mostly polarized fluorescence, silicon vacancy centers (SiVs) in diamonds have become an attractive and promising system for the realization of bright, narrow bandwidth, single-photon sources. In bulk diamond at cryogenic temperatures the SiV ZPL has been observed with a linewidth limited only by fluorescence lifetime, and the transitions were spectrally stable over hours.Unfortunately the spin coherence time was found to be severely limited by phonon processes in the ground state, which may be quenched in small nanodiamonds (NDs).
However, SiV centres in NDs are found to exhibit an intermittency in their luminescence, which is known as *blinking", and also significant spectral diffusion. We have investigated the fluorescence of SiV in small NDs produced using a novel High Pressure and High Temperature synthesis. These have exhibited ZPL linewidths five times narrower than any other reported SiV in NDs. We have measured spectral diffusion as a function of excitation laser intensity, and found it to be suppressed with lower laser power. This suggests the mechanism may arise from photo-chemistry on the ND surface.