Hannover 2016 – wissenschaftliches Programm

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Q: Fachverband Quantenoptik und Photonik

Q 58: Poster: Quantum Optics and Photonics IV

Q 58.59: Poster

Donnerstag, 3. März 2016, 16:30–19:00, Empore Lichthof

Nano-structured chips for dielectric laser accelerators and laser triggered electron emission — •Peyman Yousefi, Joshua McNeur, Martin Kozak, and Peter Hommelhoff — Department Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstr. 1, 91058 Erlangen, Germany

Laser-driven dielectric accelerators (DLAs) are based on the synchronicity of laser-induced electromagnetic fields and charged particles traversing nano-structured chips. Proof of principle experiments have shown efficient acceleration with energy gradients already exceeding those of RF accelerators [1,2]. To improve upon these gradients, new dielectric structures composed of varying materials must be built. Different techniques can be utilized to fabricate such structures depending on the material properties and the desired geometries. Electron beam lithography with spatial resolution of 2-5 nm enables us to pattern such structures down to 50 nm feature size. Depending on the geometry of the desired structure we use either reactive ion etching tool enhanced by inductive coupled plasma or deep reactive ion etching tool to etch different substrates (Si, SiO2, SiC, Al2O3 etc.). Furthermore, we report on recent results of the fabrication of an on chip electron source appropriate for integration with DLAs. An apex radius of about 30 nm and a cathode to anode gap of around 30 nm were achieved using focused ion beam (FIB) on a thin film of gold on a fused silica substrate. [1] J. Breuer, and P. Hommelhoff, Phys. Rev. Lett. 111, 134803 (2013). [2] E. A. Peralta, et al. Nature 503, 91-94 (2013).