Hannover 2016 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 58: Poster: Quantum Optics and Photonics IV
Q 58.61: Poster
Donnerstag, 3. März 2016, 16:30–19:00, Empore Lichthof
Selective etching of fs-laser structured crystalline YAG — •Kore Hasse1,2, Christian Kränkel1,2, and Thomas Calmano1,2 — 1Institut für Laser-Physik, Universität Hamburg — 2The Hamburg Centre for Ultrafast Imaging, Universität Hamburg
The etching rate of fs-laser structured dielectric materials is increased within the modified region by order of magnitude. This enables the fabrication of narrow hollow structures with dimensions comparable to those of the fs-inscribed structures of a few micrometers. In future this may allow modifying active laser and amplifier materials and influence their transversal mode profile or suppress amplified spontaneous emission (ASE).
Here we report on preliminary investigations on selective etching of fs-laser structured wedges in undoped YAG-samples. We present etching rates of unmodified YAG and those of YAG crystals modified with different fs-laser pulse parameters. Furthermore, we compare roughness and scattering losses of fs-laser assisted etched surfaces and surfaces resulting from direct laser ablation.