Regensburg 2016 – wissenschaftliches Programm

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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 47: Poster: Interfaces and Thin Films

CPP 47.17: Poster

Mittwoch, 9. März 2016, 18:15–21:00, Poster B2

Oxidation behavior of Si_xH_yN_z films prepared via plasma-enhanced chemical vapor deposition — •Sebastian Dahle^1,2, Jan-Stefan Peters^1,2, and Wolfgang Maus-Friedrichs^1,2 — ¹Clausthaler Zentrum für Materialtechnik, Technische Universität Clausthal, Leibnizstr. 9, 38678 Clausthal-Zellerfeld, Germany — ²Institut für Energieforschung und Physikalische Technologien, Technische Universität Clausthal, Leibnizstr. 4, D-38678 Clausthal-Zellerfeld, Germany

Abstract: The deposition of silicon-containing films is possible in a very simple manner via plasma-enhanced chemical vapor deposition (PECVD). A dielectric barrier discharge (DBD) plasma was used to prepare Si_xH_yN_z films from 1.5% monosilane (SiH₄) diluted in nitrogen. These films were easily transformed into stoichiometric silicon dioxide (SiO₂) by a second DBD treatment in either oxygen or air. Further, the Si_xH_yN_z films were sensitive to atmospheric air even without plasma excitation, although a simple exposure to air was not able to completely transform it into stoichiometric SiO₂. However, the morphology of the resulting silicon oxide (SiO_x) films severely depended on the pressure and the gas used to oxidize the PECVD primer films.