Regensburg 2016 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 10: Focus Session: Ferroic Domain Walls III
DF 10.1: Topical Talk
Mittwoch, 9. März 2016, 15:00–15:30, H25
Controlling domain wall motion as a route towards new functionalities in Pb(Zr,Ti)O3 ferroelectric thin films — •Leo McGilly1, Ludwig Feigl1, Petr Yudin1, Tomas Sluka1,2, Alexander Tagantsev1, and Nava Setter1 — 1Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland — 2DPMC-MaNEP, University of Geneva, 24 Quai Ernest Ansermet, 1211 Geneva 4, Switzerland
Ferroelectric domain walls offer the exciting prospect of truly nanoscale reconfigurable circuits owing to their small thickness, typically 1-5 nm, their inherently mobile nature and the functional properties they exhibit. However, to fully harness their potential as nanoscale functional entities, it is essential to achieve reliable and precise control of their nucleation, location, number and velocity. In this work we demonstrate an ability that allows extensive control of individual and multiple 180∘ domain walls in PZT thin films. Furthermore advances towards readout of domain wall position, via a read-restore technique will be presented. This method involves measurement of partial switching currents due to domain wall perturbations from an initial position through sub-switching voltage pulses. Finally, understanding the interaction of domain walls with defects is crucial to tailoring their properties. For future devices based on individual domain walls and their motion, defects could potentially kill or create functionality. We show that local nanoscale defect regions can be used to modify imprint and domain wall motion. This adds an additional dimension to the domain-wall-control toolbox.