Regensburg 2016 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 11: Poster

DF 11.14: Poster

Wednesday, March 9, 2016, 18:00–20:00, Poster E

Fabrication and characterization of epitaxial BiAlO₃ thin films — •Johanna Fischer, Cécile Carrétéro, Vincent Garcia, Stéphane Fusil, Agnes Barthélémy, and Manuel Bibes — Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France

For applications in information technology ferroelectrics with a high critical temperature are desired [1]. BiAlO₃ is such a material and may replace the existing, environmentally harmful lead-based composites in the future [2,3]. This study is dedicated to the epitaxial growth of thin films of BiAlO₃ on (001)-oriented single crystalline LaAlO₃ and SrTiO₃ substrates using pulsed laser deposition. We monitor the thin film growth in situ via reflection high energy electron diffraction (RHEED). To improve the crystalline quality a conductive interlayer of LaNiO₃, acting also as a bottom electrode, is deposited between the substrate and the BiAlO₃ thin film. We characterize the structural properties, thickness as well as interface and surface roughness of our samples using high resolution X-ray diffractometry and reflectometry. The surface topography is determined by atomic force microscopy and the ferroelectric properties by piezoresponse force microscopy.
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P. Baettig et al., Chem. Mater. 17, 1376-1380 (2005)
J.Y.Son et al., Appl. Phys. Lett. 92, 222911 (2008)