Regensburg 2016 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 11: Poster

DF 11.23: Poster

Wednesday, March 9, 2016, 18:00–20:00, Poster E

Domain walls in SrMnO3 thin films under epitaxial tensile strain — •Lokamani Lokamani¹, Carina Faber³, Peter Zahn¹, Nicola Spaldin³, and Sibylle Gemming^1,2 — ¹Institute of Ion Beam Physics and Materials Research, HZDR e.V., 01314 Dresden, Germany — ²Instiute of Physics, Technische Universität, 09107 Chemnitz, Germany — ³Materials Theory, ETH, 8093 Zürich, Switzerland

Strontium manganate (SrMnO₃), a perovskite polymorph, exhibits cubic structure at low temperatures, which transforms into a hexagonal one at high temperatures. Density-functional calculations showed earlier, that under tensile strain the ground state of bulk SrMnO3 corresponds to a G-type-antiferromagnetic (G-AFM) cubic structure. If deposited as epitaxially strained thin film a rearrangement of the MnO₆ coordination polyhedra was calculated, which is antiferrodistortive in the plane parallel to the substrate[1]. Recently, ferroelectric domains have been observed experimentally in thin films of SrMnO₃ (20nm) on (001)-oriented LSAT with a 1.7% tensile strain[2]. Strikingly, the domain walls were found to be electrically insulating, rendering the domains to form stable nano-capacitor.

Here, we present a first-principle investigation of the domain wall formation in thin films of SrMnO₃, their non-conductive behaviour and the effect of vacancies and defects on the conductance properties of such domain walls.

J. H. Lee et. al., PRL 104, 207204 (2010).
C. Becher et. al., Nature Nanotechnology 10, 661 (2015).