Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DF: Fachverband Dielektrische Festkörper
DF 4: Photovoltaics (HL with DF)
DF 4.6: Vortrag
Montag, 7. März 2016, 16:15–16:30, H2
Synchrotron-based spectroscopy study of the conduction band development in Cu2ZnSn(S,Se)4 with different [S]/([S]+[Se]) ratios — •Tetiana Olar1, Iver Lauermann1, Archana Manoharan2, Lorenzo Pardini2, Karsten Hannewald2,3, Claudia Draxl2,3, Haibing Xie4, Edgardo Saucedo4, Binoy Chacko1, and Martha Lux-Steiner1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie GmbH,Albert-Einstein-Str. 15, 12489 Berlin,Germany — 2Humboldt-Universität zu Berlin, Zum Großen Windkanal 6, 12489 Berlin, Germany — 3Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany — 4Catalonia Institute for Energy Research- IREC, Jadinsde les Dones de Negre 1, 08930 Sant Adrià de Besòs (Barcelona), Spain
Cu2ZnSn(S,Se)4 absorber layers with different [S]/([S]+[Se]) ratios were studied using XPS, UPS, HIKE and NEXAFS. To investigate the band gap transition from the pure sulfide to the pure selenide compound, the valence band maximum (VBM) and conduction band minimum (CBM) were probed. In UPS and HIKE measurements, the relative distance between Fermi level and VBM for the pure sulfide sample was 130 meV larger than for the pure selenide. Using NEXAFS to probe the CBM, a systematic study of the positions of K- and L-absorption edges was done and the observed shifts are proportional to the relative shifts in the CBM. The experimental findings are further validated and analyzed by performing corresponding ab initio calculations using the full-potential all-electron code exciting.