Regensburg 2016 – scientific programme
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.16: Poster
Monday, March 7, 2016, 17:00–19:00, Poster A
Evaluation of graphite defects by microscopic ellipsometry — •Shun Okano1, Jana Kalbacova1, Constance Schmidt1, Christoph Günther1, Raul D. Rodriguez1, Elias Garratt2, Babak Nikoobakht2, Ovidiu D. Gordan1, Angela R. Hight Walker3, and Dietrich R. T. Zahn1 — 1Technische Universität Chemnitz Semiconductor Physics, Chemnitz, 09126 — 2Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA — 3Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Carbon materials, for instance graphite, graphene, or CNTs, are interesting for many modern applications. Therefore it is important to investigate defects in these materials. Since defects have a great effect on the properties of the material, like the refractive index, we focused on the investigation of defects by microscopic ellipsometry and compare the results with those from micro-Raman spectroscopy which is an established method for the characterization of defects. Defects on highly ordered pyrolytic graphite were produced by a focused Ga+ ion beam with ion fluence ranging from 3·1010 to 1015 ions/cm2 in areas of 5×5 µm2. The sample was investigated using an ellipsometry mapping, with an Accurion Nanofilm EP4 setup. With this we can visualize the defects the Ψ and Δ maps and determine the changes of refractive index and optical constants.