Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Postersession DS

DS 12.34: Poster

Monday, March 7, 2016, 17:00–19:00, Poster A

Improving Thermoelectric Performance of TiNiSn by insertion of NiMnSb in the Half Heusler Structure — •Tanya Berry, Siham Ouardi, and Claudia Felser — Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.

TiNiSn n-type semiconductors are promising thermoelectric material due to their high power factor. TiNiSn and NiMnSb are Half Heusler alloys that are economic and in high abundance in nature. In this work, we improved the thermoelectric properties of TiNiSn by insertion of NiMnSb in the Half Heusler Structure. The samples were prepared using arc melting technique. As caste and annealed samples were characterized using powder X-ray diffraction patterns, energy-dispersive X-ray spectroscopy, and differential scanning calorimetry to determine the phases and microstructure of the samples. Full Heusler phases were observed in samples with higher substitution amount of NiMnSb. Compared to TiNiSn, the power factor of substituted compounds is enhanced and the thermal conductivity is reduced. Further results will be discussed in the poster.