Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.38: Poster
Montag, 7. März 2016, 17:00–19:00, Poster A
Resistive switching phenomenon and hole wind effect in YBCO thin films — Martin Truchly1, •Elena Zhitlukhina2, and Tomas Plecenik1 — 1Department of Experimental Physics, Comenius University, 84248 Bratislava, Slovak Republic — 2Donetsk Institute for Physics and Engineering, 03680 Kyiv, Ukraine
We present an overview of our experimental and theoretical activities aimed to clarify the mechanism of resistive memory effects in YBCO thin layers. The phenomenon was studied by scanning spreading resistance microscopy (SSRM) and scanning tunneling microscopy (STM) techniques. The most striking feature uncovered (in contrast to previous experiments on planar bilayers with YBCO films) was the opposite voltage-bias polarity of the switching effect in all SSRM and a number of STM measurements. Observed hysteresis in current-voltage characteristics is interpreted as a movement of oxygen vacancies in the vicinity of the tip-YBCO contact. Since the charge distribution in YBCO samples is expected to be strongly inhomogeneous, the balance between the direct electrostatic force on activated oxygen ions and that caused by momentum exchange with the current carriers (holes) hitting them determines direction in which the oxygen vacancies are moving. We propose a minimalist model with the only fitting parameter that accounts for the resistance hysteresis phenomenon in the YBCO films studied.