Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.53: Poster
Montag, 7. März 2016, 17:00–19:00, Poster A
Temperature-driven phase transition in V1−xMoxO2 thin films: Interplay of Structural and Electronic Transitions — Sven Esser, Sebastian Merten, Christoph Meyer, and •Vasily Moshnyaga — I. Physikalisches Institut, Georg-August- Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen
VO2 with a metal-insulator transition (MIT) at 340 K and resistivity change by 3-4 orders of magnitude [1] is a promising candidate for fast switching devices. In the same temperature regime a structural phase transition (SPT) from monoclinic structure to rutile [2] also occurs. Both phase transitions could be driven quasi optically, which opens the possibility as fast optical switches (FOS)[2].
Due to several doping values different crystal structures (R, M1, M2, T [3]) of VO2 can be stabilized at room temperature. For high quality films of definite composition a precise control of the Mo-content during preparation is necessary.
We report the growth of epitaxial V1−xMoxO2 (x=0−0.04) thin films on Al2O3 (0001) substrates by means of low-oxygen MAD technique. Resistivity and Raman measurements probe the position of the MIT and SPT for a better understanding of the correlation between both phase transitions.
This work is supported by the German Science Foundation through SFB 1073, TP B04.
[1] N. Shukla et al., Nat. Commun. 6, 7812 (2015)
[2] D. Wegkamp, Dissertation, FU Berlin (2015)
[3] E. Strelcov et al., Nano Lett. 12, 6198 (2012)