Regensburg 2016 – scientific programme
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.54: Poster
Monday, March 7, 2016, 17:00–19:00, Poster A
Phase Change Characteristics of Sn/Pb Chalcogenides — •Zheng Zeng1, Stefan Jakobs1, and Matthias Wuttig1,2 — 1I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2JARA - Fundamentals of Future Information Technology, RWTH Aachen University, Germany
Phase change materials (PCMs) uniquely combine physical properties. They exhibit a large electrical and optical contrast between their amorphous and crystalline phases. Moreover, the switching between these two phases occurs on a nanosecond timescale rendering those materials perfect candidates for data storage applications.[1]
So far, mainly compositions consisting of Ge, such as Ge1Sb4Te7, Ge1Sb2Te4 and Ge2Sb2Te5, have been identified as PCMs, and some of them are frequently applied in commercial products like rewritable DVD. In this work, we focus on Sn and Pb chalcogenides, which are isoelectronic substitutions of Ge, and explore their potential as possible phase change materials.
Our samples are made as thin films via sputter deposition and are subsequently characterized by means of X-ray diffraction, Van-der-Pauw measurements and Fourier transform infrared spectroscopy.
[1] Wuttig, M. and Yamanda, N. Nature materials 6(11), 824-832 (2007)