Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 20: Topological Insulators: Status Quo and Future Directions
(Joint session of DS, O and TT, organized by DS)
DS 20.1: Vortrag
Dienstag, 8. März 2016, 12:30–12:45, H8
Topological invariants in the embedding-potential — Hiroshi Ishida2 and •Daniel Wortmann1 — 1Peter Grünberg Institut, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany — 2College of Humanities and Sciences, Nihon University, Tokyo, Japan
The embedding potential[1] defined at the boundary of a semi-infinite crystal defines the boundary condition for the wavefunction and can be interpreted as its logarithmic derivative. We demonstrate how this embedding potential can be utilized to determine the Z2 topological invariant in time-reversal invariant insulators and how the formation of the surface states can be understood in terms of properties of the embedding potential.
Besides the general ideas and the theory, numerical examples for simple topological insulators and trivial materials will be shown and compared.
[1] J.E.Inglesfield, J. Phys. C 14, 3795 (1981)