Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 24: 1D Metal Wires on Semiconductors II
(Joint session of DS and O, organized by O)
DS 24.6: Vortrag
Dienstag, 8. März 2016, 15:15–15:30, S052
Strain induced quasi one-dimensional rare earth silicides structures on Si(111) — •Frederic Timmer1, Robert Oelke1, Martin Franz2, Stephan Appelfeller2, Mario Dähne2, and Joachim Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49076 Osnabrück, Germany — 2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Rare earth elements (REE) covered silicon surfaces have been in the focus of research for more than 30 years due to their unique properties. For instance, thin REE-silicide films on n-type Si(111) possess very low Schottky-barriers in conjunction with an abrupt surface making them interesting as ohmic contacts. Furthermore REE-nanowires might be applicable as interconnects in future nanodevices or as plasmonic waveguides due to their quasi one-dimensional structure.
Here, we report on a (2 √3 × √3) R30∘ reconstruction for REE coverages exceeding 1 ML which is therefore related to the well-known (√3 × √3) R30∘ reconstruction. We characterize the structure of the silicide films by means of Low Energy Electron Diffraction (LEED) including Spot Profile Analysis (SPA-LEED) and Scanning Tunneling Microscopy (STM). The stoichiometry of the films and their growth mode is studied by Auger Electron Spectroscopy (AES). Combining experimental results, we develop a complex model for the reconstructed surface including formation of quasi one-dimensional structures, due to striped domains.