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DS: Fachverband Dünne Schichten

DS 24: 1D Metal Wires on Semiconductors II
(Joint session of DS and O, organized by O)

DS 24.7: Vortrag

Dienstag, 8. März 2016, 15:30–15:45, S052

Local transport measurements on terbium-silicide nanowires — •Frederik Edler¹, Ilio Miccoli¹, Herbert Pfnür¹, Stephan Appelfeller², Mario Dähne², Simone Sanna³, Wolf G. Schmidt³, and Christoph Tegenkamp¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover — ²Institut für Festkörperphysik, TU Berlin, 10623 Berlin — ³Lehrstuhl für Theoretische Physik, Universität Paderborn, 33098 Paderborn

Metal silicide wires play an important role in electronics as ohmic contacts and gate electrodes due to their very low resistivity. Rare-earth (RE) metals (eg. Tb, Dy, Er, Y) can be used to grow long, extremely thin nanowires because of uniaxial lattice matching with Si which could be used for additional downscaling of Si based technology.
The transport properties of Tb silicide wires have been studied via 4-tip STM/SEM system. The SEM allows a fast characterization of sample quality and precise positioning of feedback controlled STM tips, enabling gentle contacts and transport measurements on a nm-scale. Moreover, the STM was used to correlate the surface morphology of nanowires with transport findings.
Our measurements reveal three types of metallic wires mainly depending on the growth parameters. Further analysis shows that the resistivity is strongly depending on the height of wires, which is increased for small heights. The data can be perfectly described by a theoretical model taking into account the surface roughness and lateral surface correlation. STS reveals that the wires are electronically decoupled from the Si substrate in agreement with recent DFT calculations.