Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 28: Thin Film Applications
DS 28.7: Vortrag
Mittwoch, 9. März 2016, 11:30–11:45, H8
Electric Conductivity of Ultrathin Gallium Layers — •Frank Lawrenz1, Stephan Block2, and Christiane A. Helm1 — 1Inst. for Physics, University Greifswald, 17487 Greifswald, Germany — 2Chalmers University of Technology, 41296 Göteborg, Sweden
Fabrication of ultrathin conductive layers is important for many technological applications. We describe a simple method for the formation of 3 nm thin gallium layers that extent up to 1 cm2. UV-vis, ellipsometry and conductivity measurements show that the Ga layers immediately oxidize at their surface under ambient conditions, followed by slow oxidation that is completed within three weeks. The specific conductivity as determined by Ohm’s law is 1 order of magnitude smaller than that of bulk Ga even for fresh layers, motivating application of the Fuchs-Sondheimer law for ultrathin metal layers for accurate quantification. The decrease in conductivity shows the same time dependence as the Ga oxidation and is described by a developed rate model.