Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Phase Change / Resistive Switching

DS 3.10: Vortrag

Montag, 7. März 2016, 12:00–12:15, H8

Structural characterization of epitaxial trigonal Ge-Sb-Te grown by MOVPE — •Martin Schuck¹, Sally Rieß¹, Hongchu Du², Manuel Bornhöfft³, Gregor Mussler¹, Martina von der Ahe¹, Alexander Schwedt², Joachim Mayer^2,3, Hilde Hardtdegen¹, and Detlev Grützmacher¹ — ¹Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-9), JARA, 52425 Jülich, Germany — ²Forschungszentrum Jülich GmbH, Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons (ER-C), JARA, 52425 Jülich, Germany — ³RWTH Aachen University, Central Facility for Electron Microscopy (GFE), JARA, 52074 Aachen, Germany

Recently, we reported on the successful deposition of trigonal monocrystalline Ge₁ Sb₂ Te₄ on Si by MOVPE. The deposited material bears structural analogies to interfacial Phase-Change Memories (iPCM), where induced switching in the crystalline phase has been reported in highly textured crystalline (Sb₂ Te₃)_x (GeTe)_y super-lattices. Therefore trigonal Ge-Sb-Te may act as a model material for iPCM to elucidate the underlying switching effect.

Here we present the structural characterization of epitaxial trigonal Ge₁ Sb₂ Te₄ and Ge₂ Sb₂ Te₅ films on Si (111) deposited by MOVPE. The morphology, structure and composition was investigated using SEM, XRD, HAADF-STEM, EBSD and EDS. STEM investigations reveal highly ordered septuple and nonuple layers, respectively, separated by van der Waals gaps. The structural correlation between monocrystalline Ge-Sb-Te and iPCM will be discussed.