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Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Phase Change / Resistive Switching

DS 3.10: Talk

Monday, March 7, 2016, 12:00–12:15, H8

Structural characterization of epitaxial trigonal Ge-Sb-Te grown by MOVPE — •Martin Schuck1, Sally Rieß1, Hongchu Du2, Manuel Bornhöfft3, Gregor Mussler1, Martina von der Ahe1, Alexander Schwedt2, Joachim Mayer2,3, Hilde Hardtdegen1, and Detlev Grützmacher11Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-9), JARA, 52425 Jülich, Germany — 2Forschungszentrum Jülich GmbH, Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons (ER-C), JARA, 52425 Jülich, Germany — 3RWTH Aachen University, Central Facility for Electron Microscopy (GFE), JARA, 52074 Aachen, Germany

Recently, we reported on the successful deposition of trigonal monocrystalline Ge1 Sb2 Te4 on Si by MOVPE. The deposited material bears structural analogies to interfacial Phase-Change Memories (iPCM), where induced switching in the crystalline phase has been reported in highly textured crystalline (Sb2 Te3)x (GeTe)y super-lattices. Therefore trigonal Ge-Sb-Te may act as a model material for iPCM to elucidate the underlying switching effect.

Here we present the structural characterization of epitaxial trigonal Ge1 Sb2 Te4 and Ge2 Sb2 Te5 films on Si (111) deposited by MOVPE. The morphology, structure and composition was investigated using SEM, XRD, HAADF-STEM, EBSD and EDS. STEM investigations reveal highly ordered septuple and nonuple layers, respectively, separated by van der Waals gaps. The structural correlation between monocrystalline Ge-Sb-Te and iPCM will be discussed.

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