Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 3: Phase Change / Resistive Switching
DS 3.14: Vortrag
Montag, 7. März 2016, 13:00–13:15, H8
Dielectric properties and AC conductivity of amorphous phase change materials — •chao chen1, hanno volker1, peter jost1,2, marvin kaminski2, and matthias wuttig1,2 — 1I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2JARA-FIT, RWTH Aachen University, Germany
Chalcogenide-based phase-change materials (PCMs) are popular for their widespread potential applications in both optical and electrical data storage devices [1]. These applications depend on the pronounced contrast of physical properties between the amorphous and crystalline phases and the ability to rapidly switch between these two phases. PCMs are non-volatile, with fast switching velocity (10 ns) and excellent endurance (1010 cycles), which ensures significant potential application for switches. Although the properties of crystalline PCMs have been intensively studied, the phenomena of electrical drift [2] and threshold switching [3] in the amorphous phase are still not well understood, which hampers the development of PCM-based electrical devices and multilevel storage. Several mutually incompatible models about electric transport, such as the small polaron model by Emin [4], the Poole Frenkel model [5], and a band transport model [6] have been developed to explain the behavior of amorphous PCMs. To provide crucial input parameters that should help to derive a unique model, the AC conductivity and dielectric constants of several amorphous PCMs have been studied to determine properties trends and develop a more systematic understanding.