Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 3: Phase Change / Resistive Switching
DS 3.9: Vortrag
Montag, 7. März 2016, 11:45–12:00, H8
Non-volatile capacitive switching of BiFeO3-coated Si3N4 /Ge/Si structures — •Kefeng Li1,2, Lars Rebohle2, Nan Du1, Tiangui You1, Slawek Prucnal2, Ilona Skorupa1, Danilo Bürger1, Thomas Schröder3, Oliver G. Schmidt1,4, and Heidemarie Schmidt1 — 1Faculty of Electrical and Information Engineering, TU Chemnitz — 2Institute of Ion Beam Physics and Materials Research, HZDR — 3Institut for Innovative Microelectronics, IHP Frankfurt/Oder — 4Institute for Integrative Nanosciences, IFW Dresden
Multiferroic BiFeO3 (BFO) has a large remnant polarization [1]. Ca. 75 nm thick amorphous BFO layers have been grown by pulsed laser deposition at 25 °C on Si3N4/Ge/Si and afterwards recrystallized by applying a 20 ms long flash lamp annealing pulse in oxygen atmosphere [2]. Here we report on the non-volatile capacitive switching in Au/BFO/Si3N4/Ge/Si/Al structures between high capacitance state (HCS) and low capacitance state (LCS) which have a lower power consumption in comparison to the current-driven resistive switching between low resistance state and high resistance state in Au/BFO/Pt/Ti structures [3]. Whereas the HCS is rather stable for the BFO-coated and for the uncoated Si3N4/Ge/Si, the LCS is only stable for the BFO-coated Si3N4/Ge/Si. [1] S. Sakai, M.Takahashi, Materials, 3, 4950 (2010).[2] Subsecond Annealing of Advanced Materials, (Eds.: W. Skorupa, H. Schmidt), Springer Series in Materials Science, 2014.[3] Y. Shuai, S. Zhou, D. Bürger, M. Helm, H. Schmidt, J. Appl. Phys., 109, 124117 (2011)