Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 32: 2D Materials: Growth
(Joint session of DS and O, organized by O)
DS 32.5: Vortrag
Mittwoch, 9. März 2016, 11:30–11:45, S053
Novel Deposition Approach of Semiconducting MoS2 Thin Films and Their Application for Electronic Devices — •Francis Oliver Vinay Gomes1,2, Marko Marinkovic1, Jochen Brendt1, Torsten Balster2, and Veit Wagner2 — 1Evonik Resource Efficiency GmbH, Paul-Baumann-Strasse 1, 45764 Marl, Germany — 2Jacobs University Bremen, Department of Physics & Earth Science, Campus Ring 1, 28759 Bremen, Germany
In this work, MoS2 films obtained from precursor solution via spin-coating on various substrates were investigated. Molybdenum(V) chloride dissolved in 1-methoxy-2-propanol was used as precursor solution. The MoS2 films obtained from the Mo-precursor upon sulfurization during annealing were analyzed for surface morphology and roughness, chemical composition and crystallinity. In addition, comparison of silicon and sapphire substrates were studied. Our approach focuses on novel deposition technique compared to the current state-of-the-art chemical vapour deposition.
The thickness of the MoS2 films was controlled in the process, and film thicknesses between 2 and 27 nm were obtained. The thickness of the films linearly scaled with precursor concentration. SEM/EDX measurements indicate that the surface morphology and film composition is strongly dependent on the annealing temperature and processing environment. Electrical measurements demonstrate a film conductivity of 0.27 S/cm while XRD confirms the formation of semiconducting 2H-MoS2 films. The future steps will lead towards applying fabricated films in electronic devices such as thin film transistors.