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DS: Fachverband Dünne Schichten

DS 34: Atomic Layer Deposition

DS 34.1: Vortrag

Mittwoch, 9. März 2016, 12:15–12:30, H8

Quartz Crystal Microbalance Studies of the First Few ALD Cycles of Alternated Grown Titania and Alumina Layers — •Robert Zierold¹, René Faust¹, Christoph Wiegand¹, Martin Waleczek¹, Robert H. Blick¹, and Kornelius Nielsch^1,2 — ¹Institute of Nanostructure and Solid State Physics, Universität Hamburg, Hamburg, Germany — ²Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research Dresden, Dresden, Germany

Atomic layer deposition (ALD) in a supercyclic fashion is a common approach to synthesize tailor-made ternary materials, to prepare nanolaminates, or to distribute a doping species in a host material. However, assuming the growth rates of the two underlying individual ALD processes to calculate the overall thickness or the composition of the ternary material often results in a deviation to the experimentally observed values.

Herein, we present detailed, ultra precise quartz crystal microbalance (QCM) studies of the first few ALD cycles of TiO₂ deposited on an Al₂O₃ surface grown by ALD , and vice versa. A significantly altered initial growth per cycle (GPC) compared to the equilibrium (literature) value is observed. In detail, the growth of TiO₂ on Al₂O₃ is enhanced whereas the growth of Al₂O₃ on TiO₂ is reduced: In both cases, the initial GPC of the deposited oxide matches the ALD growth rate of the substrate material. Our observation can be explained by an intrinsic growth inhibition caused by the less reactive, sticking isopropyl groups occurring in the TiO₂ deposition process.