Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 35: Thin Film Characterisation: Structure Analysis and Composition II

DS 35.10: Talk

Wednesday, March 9, 2016, 17:30–17:45, H8

Nanostructured surface of multilayer graphene on 3C-SiC (001) — •Victor Aristov^1,2,3, Olga Molodtsova^1,4, Sergey Babenkov¹, Dmitry Marchenko⁵, Jaime Sánchez-Barriga⁵, Partha Sarathi Mandal⁵, Andrei Varykhalov⁵, Alexei Zakharov⁶, Yuran Niu⁶, Alexei Preobrajenski⁶, Denis Vyalikh⁷, Marc Portail⁸, Marcin Zielinski⁹, Barry Murphy¹⁰, Sergey Krasnikov¹⁰, Olaf Luebben¹⁰, Igor Shvets¹⁰, and Alexander Chaika^2,10 — ¹DESY, Hamburg, Germany — ²ISSP RAS, Chernogolovka, Russia — ³TU Bergakademie, Freiberg, Germany — ⁴ITMO, Saint Petersburg, Russia — ⁵BESSY, Berlin, Germany — ⁶Max-lab, Lund, Sweden — ⁷TU Dresden, Germany — ⁸CNRS-CRHEA Valbonne, France — ⁹NOVASiC Le Bourget du Lac, France — ¹⁰Trinity College, Dublin, Ireland

The results of atomically resolved scanning tunneling microscopy, low energy electron diffraction, low energy electron microscopy, micro-LEED and angle resolved photoelectron spectroscopy studies of graphene synthesized on cubic-SiC(001) will be presented. Uniform few layer graphene was fabricated on SiC(001)/Si(001) wafers using Si-atom sublimation followed by SiC surface layer graphitization during high-temperature annealing in ultrahigh vacuum. This work was supported by the RAS, RFBR grants No 140200949 and 140201234, by the BMBF-Project No. 05K12GU2, PSP-Element No. U4606BMB1211, by a Marie Curie IIF grant No 12/IA/1264, by SPP 1459 of DFG.