Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 35: Thin Film Characterisation: Structure Analysis and Composition II

DS 35.7: Vortrag

Mittwoch, 9. März 2016, 16:45–17:00, H8

Chemical Characterization of electrodeposited transition metal chalcogenite layers — Talha Nisar, •Torsten Balster, and Veit Wagner — Jacobs University Bremen gGmbH, Campus Ring 1, 28759 Bremen, Germany

Transition metal chalcogenides are promising materials for catalysis as well as semiconducting layers in thin film transistors, e.g. amorphous molybdenum and tungsten sulfide layers are successfully applied for water electrolysis.
In this study, we investigated the electrochemical deposition of ammonium tetrathiomolybdate (ATTM) and the subsequent annealing steps by means of x-ray photoelectron spectroscopy. The electrochemical deposition was carried out with a concentration of 0.5 mmol ATTM at room temperature in the cathodic regime with respect to Ag/Ag-Cl reference electrode. This resulted in homogenous layers with thicknesses of MoS_x (x=2..3) from 1 up to 10 nm. This layer show promising morphology to cover also complex surfaces. The deposition process results in a minor oxygen and carbon contamination, which can be reduced by proper post growth annealing conditions. Further annealing steps in an inert Ar (99.999%) atmosphere to improve crystallinity resulted in a reduction of the S content of the surface, which can be avoided in a S-containing atmosphere.