DS 36: Focussed Session: Semiconductor Heteroepitaxy on Nanopatterned Substrates
(Joint session of DS and HL, organized by DS)
Mittwoch, 9. März 2016, 15:00–18:30, H11
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15:00 |
DS 36.1 |
Topical Talk:
Single site-controlled InGaAs quantum dots grown on patterned GaAs nanoholes — •S. Höfling, S. Maier, S. Unsleber, M. Kamp, and C. Schneider
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15:30 |
DS 36.2 |
Topical Talk:
Nanometer scale correlation of structural and optical properties of individual GaAs/AlGaAs nanorodsby Scanning Transmission Electron Microscope Cathodoluminescence — •Frank Bertram, Marcus Müller, Peter Veit, and Jürgen Christen
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16:00 |
DS 36.3 |
Topical Talk:
Local Heteroepitaxy for Large-Scale Integration — •Heinz Schmid, Mattias Borg, Davide Cutaia, Kirsten Moselund, Moritz Knoedler, Nicolas Bologna, and Heike Riel
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16:30 |
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15 min. break.
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16:45 |
DS 36.4 |
Topical Talk:
Fabrication and study of metal contacts on germanium nanowires using electrical biasing in a transmission electron microscope — •Martien den-Hertog, Khalil El-Hajroui, Clemens Zeiner, Alois Lugstein, Eric Robin, Miguel Lopez-Haro, and Jean-Luc Rouviere
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17:15 |
DS 36.5 |
Topical Talk:
Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates — •Donat Josef As, Ricarda Maria Kemper, Thomas Riedl, and Jörg K.N. Lindner
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17:45 |
DS 36.6 |
GaAs-based nanowire integration on silicon via template-assisted selective epitaxy — •Moritz Knoedler, Nicolas Bologna, Mattias Borg, Heinz Schmid, Giorgio Signorello, Davide Cutaia, Kirsten Moselund, Marta Rossell, and Heike Riel
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18:00 |
DS 36.7 |
Theoretical analysis of strain and misfit dislocation stability in axial-heteroepitaxial GaAs/InAs nanopillars — •Thomas Riedl and Jörg Lindner
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18:15 |
DS 36.8 |
Selective nano-heteroepitaxial growth of GeSn islands on nano-patterned Si(001) — Viktoria Schlykow, Noriyuki Taoka, Marvin Zöllner, Oliver Skibitzki, Peter Zaumseil, •Giovanni Capellini, Yuji Yamamoto, Thomas Schröder, and Gang Niu
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