Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Focussed Session: Semiconductor Heteroepitaxy on Nanopatterned Substrates
(Joint session of DS and HL, organized by DS)

DS 36.1: Topical Talk

Wednesday, March 9, 2016, 15:00–15:30, H11

Single site-controlled InGaAs quantum dots grown on patterned GaAs nanoholes — •S. Höfling, S. Maier, S. Unsleber, M. Kamp, and C. Schneider — Technische Physik, Würzburg University

Single semiconductor quantum dots (QDs) are very attractive candidates to control charge and spin carries at the quantum level. They are therefore very promising for applications in fields ranging from nanoelectronics over nanophotonics to spintronics. One of the major challenges regarding the scalable fabrication of single QD based devices is however the precise control of the QD position within device structures. In this presentation, we summarize our results obtained on the site-controlled growth using pre-patterned nanohole templates for the controlled integration of site-controlled QDs into nanoscale devices. By combining this growth technique with a process capable of accurately aligning QDs relatively to subsequently fabricated quantum device structures, several interesting devices like single photon sources and quantum dot memories have been realized.